In an effort to gain a competitive edge in the cost-sensitive wireless communications arena, STMicroelectronics has added silicon-germanium (SiGe) biCMOS to its arsenal of process technologies. The ...

To meet growing demand in the wireless radio frequency integrated circuit (RFIC) market for a capable, cost-effective RFIC design platform, Applied Wave Research, Inc. (AWR™), a leading provider of ...

Plessey Semiconductors has started developing a 0.35 micron silicon germanium (SiGe) BiCMOS process technology on its 8-inch line at Roborough. “We have looked at SiGe bipolar and BiCMOS process ...

The following is a regular column provided to SBN by analysts at Semico Research Corp., a market research firm in Phoenix. Joanne Itow is a senior analyst at Semico. The foundry market is a customer ...

NEWPORT BEACH, Calif.--(BUSINESS WIRE)--TowerJazz, the global specialty foundry leader, today announced the availability of enhanced RF SOI CMOS and high speed SiGe process design kits (PDKs) for its ...

MIGDAL HAEMEK, Israel-- August 03, 2011--TowerJazz, the global specialty foundry leader, today announced its 0.13um SiGe technology (SBL13) has been successfully transferred to its Migdal Haemek (MH), ...

Targeting high frequency radio applications, NXP Semiconductors today announced the launch of a series of new products developed in the latest SiGe (silicon-germanium) process technology. Addressing ...

Selecting a silicon technology that deviates from today's mainstream CMOS foundry road maps may appear, at first glance, to be a risky proposition. While conventional wisdom states that standard CMOS ...

IBM claims to have doubled the peak performance of silicon germanium (SiGe) BiCMOS technology with a 130nm foundry process. This could threaten the widespread use of higher cost gallium arsenide (GaAs ...

Jazz Offers Cost-Effective 0.13-micron SiGe BiCMOS Process Platform with 200GHz Transistors for Highest Performance System-on-Chip (SoC) Applications NEWPORT BEACH, Calif., April 11, 2007 -- Jazz ...

IBM has developed its fifth generation of semiconductor technology targeted at high performance communications applications. The silicon germanium process, called 9HP, is designed to support ...

The 8HP silicon-germanium (SiGe) process doubles its predecessor's performance. This IBM development utilizes 130-nm design rules to achieve a top transistor cutoff frequency (f T) of 200 GHz.