Abstract: This paper reports an analytical model of threshold voltage for the Schottky-source/drain (Schottky-S/D) double gate-all-around (DGAA) FETs. In order to develop the threshold voltage model, ...
Abstract: A closed-form, analytical, and unified model for the surface potential from source to drain in nanowire (NW) gate-all-around (GAA) tunneling field effect transistors (TFETs) is proposed and ...
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