Samsung Electronics has boosted its sixth-generation 1c DRAM yield to nearly 80%, enhancing its HBM4 competitiveness.

Samsung Electronics is preparing to enter the final quality testing phase for Nvidia's sixth-generation high-bandwidth memory ...

Samsung foundry boosts 4nm logic die yield to over 90% to support HBM4 production Samsung boosts 4nm logic-die yield above 90 ...

SK Hynix and Samsung Electronics, both competing for the lead in the global high-bandwidth memory (HBM) market, showcased ...

Samsung yields for 1c DRAM HBM4 rumored at around 50% with yield stabilization in process, ready for NVIDIA Rubin AI GPUs to compete with SK hynix, Micron.

Feature The generative AI revolution has exposed a brutal truth: raw computing power means nothing if you can't feed the ...

Samsung Electronics will hold its largest in-house technology event, “Samsung Tech Expo,” to share the direction of ...

Samsung Electronics will unveil key technologies shaping its 2025 growth engines, including the highly anticipated HBM4 ...

Hanmi Semiconductor announced on October 22 that it will participate in 'Semiconductor Exhibition (SEDEX) 2025,' held at COEX ...

Samsung Electronics is aiming for a goal of over 3TB/sec bandwidth for its next-gen HBM4E memory, aims for up to 3.25TB/sec ...

Micron announces industry leading HBM4 with 2.8TB/s bandwidth and 11Gbps pin speeds, claiming performance advantage over Samsung and SK Hynix.

Look at my huge bandwidth and sharp pricing Samsung is waving fresh HBM4 and HBM4E roadmaps and inking chunky memory deals ...