Abstract: In this paper, we carried out a systematic investigation on gate degradation and the physical mechanism of the Schottky-type p-GaN gate HEMTs under positive gate voltage stress. The ...

A monolithic bidirectional switch based on anti-paralleled two reverse blocking p-GaN HEMTs has been proposed and demonstrated in this work. The recessed Schottky drain technique is utilized to ...

Finally, we suggest a new metric for evaluating GAN results, both in terms of image quality and variation. As an additional contribution, we construct a higher-quality version of the CelebA dataset.