Scientists from the French research organisation CEA-Leti presented three papers at Photonics West 2025 detailing the ...
KRISS has addressed these challenges by developing a new InAsP material, grown on an InP substrate as the light-absorbing ...
Navitas Semiconductor,. which makes the GaNFast GaN and GeneSiC SiC power semiconductors, has announced that both ...
Compound Semiconductorâ„¢ is an Angel Business Communications publication.
To improve the durability of tin perovskite, a method called Ruddlesden-Popper (RP) has been proposed that introduces large ...
One option for combating a scaling-induced hike in leakage current is to insert a high -κ dielectric between the gate metal ...
Compound Semiconductorâ„¢ is an Angel Business Communications publication.
Tunable lasing at around 405 nm is realised with an InGaN device featuring a narrow-ridge active channel and a periodically ...
The hybrid integration of GaN and silicon paves the way for high-efficiency, cost-effective 5G and millimetre-wave RF systems that provide a cutting-edge power density and scalability.
AlixLabs AB, a Swedish semiconductor startup specialising in Atomic Layer Etching (ALE), announces that it has entered a ...
Strengths of the double-heterostructure devices, made by engineers at Nanyang Technical University, A*STAR, the Singapore-MIT ...
The team has just determined that its approach – involving plasma nitridation of the SiC surface, sputter deposition of SiO 2 ...
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